2 papers
cs.LG2026
Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
Gyujun Jeong, Sungwon Cho, Minji Shon +13
Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages…
cs.ET2025
Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache
Faaiq Waqar, Jungyoun Kwak, Junmo Lee +4
The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To…