4 citations · 4 across the 2 of their papers we have counts for
3 papers
Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques
Kuldeep Ray, Jérémie Vigier, Sylvain Martin +4
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a p…
Intrinsic back-switching phenomenon in SOT-MRAM devices
Kuldeep Ray, Jérémie Vigier, Perrine Usé +5
The writing process of SOT-MRAMs is considered deterministic when additional symmetry-breaking factors, such as the application of an external magnetic field aligned with the curre…
Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM
Rahul Gupta, Chloé Bouard, Fabian Kammerbauer +6
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for…