most citedSelf-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)

2 citations · 2 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2014★ 2 cited

Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)

William A. O'Brien, Meng Qi, Lifan Yan +5

This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots…