2 papers
cond-mat.mtrl-sci2023
Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Zuojian Pan, Zhizhong Chen, Yiyong Chen +15
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped…
cond-mat.mtrl-sci2023
Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
Z. Pan, Z. Chen, H. Zhang +16
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the…