most citedEffect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

5 citations · 5 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2023★ 5 cited

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Zuojian Pan, Zhizhong Chen, Yiyong Chen +15

Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped…