2 papers
cond-mat.mes-hall2023
Ultra-high mobility semiconducting epitaxial graphene on silicon carbide
Jian Zhao, Peixun Ji, Yaqi Li +12
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalizatio…
cond-mat.mes-hall2019
An epitaxial graphene platform for zero-energy edge state nanoelectronics
Vladimir S. Prudkovskiy, Yiran Hu, Yue Hu +16
Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm.…