Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature

Takumi Inaba, Yuichi Kato, Yoko Iizumi +4

Carbon nanotube field-effect transistors (CNTFETs) are promising for monolithic 3D integration with silicon CMOS circuits in back-end-of-line (BEOL) processes. Further reduction in…