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3 papers
Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
Prasanna Venkatesan, Taeyoung Song, Yueyun Chen +22
We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced curr…
Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during C Post-Processing Forming Gas Annealing
Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar +13
We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical C post-processing forming gas anneal (FGA) on the electrical performance,…
System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability
Mahdi Benkhelifa, Leon Mayr, Hadi Nour Eddine +3
Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The perfor…