L. Larcher

most citedExperiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during

40 0^{\circ}

C Post-Processing Forming Gas Annealing

1 citations · 1 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2026★ 1 cited

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during $40 0^{\circ}$ C Post-Processing Forming Gas Annealing

Yu-Hsin Kuo, Chengyang Zhang, Priyankka Ravikumar +13

We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical $40 0^{\circ}$ C post-processing forming gas anneal (FGA) on the electrical performance,…

cs.ET2026

System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability

Mahdi Benkhelifa, Leon Mayr, Hadi Nour Eddine +3

Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The perfor…

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during 400∘C Post-Processing Forming Gas Annealing

System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability

Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during $40 0^{\circ}$ C Post-Processing Forming Gas Annealing