6 papers
Electron-phonon coupling across the TMD/hBN van der Waals interface
G. Gatti, C. Berthod, J. Issing +18
Many-body interactions can couple electronic states in one layer with collective excitations in the adjacent layer, providing a route to tailor properties of heterostructures. Howe…
Interband State Transfer in Double-Gated Bilayer Graphene at High Electric Field
Margherita Melegari, Brian Skinner, Ignacio Gutierrez-Lezama +1
The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential ene…
Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors
Fengrui Yao, Menghan Liao, Marco Gibertini +7
Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bul…
Spin valve effect in junctions with a single ferromagnet
Fengrui Yao, Volodymyr Multian, Kenji Watanabe +3
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magn…
Moire magnetism in CrBr3 multilayers emerging from differential strain
Fengrui Yao, Dario Rossi, Ivo A. Gabrovski +8
Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twist…
Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor
Xiaohanwen Lin, Fan WU, Nicolas Ubrig +4
In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteri…