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cond-mat.mtrl-sci2011★ 17 cited
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Timothy J. McArdle, Jack O. Chu, Yu Zhu +6
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuu…
cond-mat.mtrl-sci2010★ 1 cited
100 GHz Transistors from Wafer Scale Epitaxial Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gat…