5 papers
Substitutional platinum as an efficient nonradiative recombination center in silicon
Zhenxing Dai, Menglin Huang, Xin-Gao Gong +1
Platinum (Pt) is widely used for carrier-lifetime control in silicon power devices, yet the microscopic nonradiative recombination mechanism of the substitutional platinum ($\text{…
Symmetry Adapted Analysis of Screw Dislocation: Electronic Structure and Carrier Recombination Mechanisms in GaN
Yuncheng Xie, Haozhe Shi, Menglin Huang +3
As fundamental one-dimensional defects, screw dislocations profoundly reshape the energy landscape and carrier dynamics of crystalline materials. By restoring the exact algebra of…
Machine learning Hamiltonian enables scalable and accurate defect calculations: The case of oxygen vacancies in amorphous SiO
Zhenxing Dai, Zhong Yang, Mingjue Ni +4
Point defects critically influence the properties of materials and devices, yet density functional theory (DFT) remains computationally demanding for defect supercell calculations.…
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Shanshan Wang, Menglin Huang, Su-Huai Wei +2
The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend…
Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors
Junjie Zhou, Shanshan Wang, Menglin Huang +2
As a typical nonradiative multiphonon transition in semiconductors, carrier capture at defects is critical to the performance of semiconductor devices. Its transition rate is usual…