1 citations · 1 across the 1 of their papers we have counts for
2 papers
physics.app-ph2023★ 1 cited
Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications
Jagori Raychaudhuri, Jayjit Mukherjee, Amit Malik +4
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transie…
physics.app-ph2023
Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
Jagori Raychaudhuri, Jayjit Mukherjee, Sudhir Kumar +3
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg 0.15m). We have studied the effect of short gat…