67 citations · 67 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2023
Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs
Zhe Zhao, Tao Xiong, Jian Gong +1
Crystalline CaF2 is drawing huge attentions due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be much superior than…
physics.app-ph2023
The interface states in gate-all-around transistors (GAAFETs)
Yue-Yang Liu, Haoran Lu, Zirui Wang +5
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling do…
cond-mat.mtrl-sci2022★ 67 cited
A gate-programmable van der Waals metal-ferroelectric-semiconductor memory
Wanying Li, Yimeng Guo, Zhaoping Luo +10
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet…