4 papers
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionalit…
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
Hojoon Ryu, Junzhe Kang, Minseong Park +5
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZn…
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Ashwin Tunga, Zijing Zhao, Ankit Shukla +2
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts.…
Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing
Zijing Zhao, Junzhe Kang, Ashwin Tunga +4
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressab…