3 papers
cond-mat.mes-hall2023
Non-equilibrium Thermal Resistance of Interfaces Between III-V Compounds
Jinchen Han, Sangyeop Lee
Interfacial thermal resistance has been often estimated and understood using the Landauer formalism that assumes incident phonons with equilibrium distribution. However, previous s…
physics.atom-ph2023
Quantifying Atomic Structural Disorder Using Procrustes Shape Analysis
Jinchen Han, Henry T. Aller, Alan J. H. McGaughey
In this study, we added vacancies adjacent to a Si/Ge interface to create a disordered structure. The structure was then relaxed using various strategies. We applied Procrustes sha…
cond-mat.mes-hall2022
Thermal resistance from non-equilibrium phonons at Si-Ge interface
Xun Li, Jinchen Han, Sangyeop Lee
As nanostructured devices become prevalent, interfaces often play an important role in thermal transport phenomena. However, interfacial thermal transport remains poorly understood…