7 papers
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2
Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminat…
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) Epitaxial Layers
Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2
We report on the experimental observation of up to 11.5 deep charge depletion in (010), (110), and (011) epitaxial layers due to ion damage from sputtering and i…
Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
Noor Jahan Nipu, Chinmoy Nath Saha, Uttam Singisetti
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabric…
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of k…