Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

Janka Biznárová, Amr Osman, Emil Rehnman +9

We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged $T_1$ energy relaxation times of up to $270\mu s$, corresponding to Q = 5 million, and a highest obs…