most citedMolecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

44 citations · 81 across the 4 of their papers we have counts for

collaborators

4 papers

physics.comp-ph201144 cited

Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Christophe Krzeminski, Quentin Brulin, V. Cuny +3

The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is construc…

cond-mat.mtrl-sci201126 cited

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

D. H. K. Murthy, T. Xu, W. H. Chen +11

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studi…

cond-mat.mtrl-sci20113 cited

Process Optimization and Downscaling of a Single Electron Single Dot Memory

Christophe Krzeminski, Xiaohui Tang, Nicolas Reckinger +2

This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic…

physics.comp-ph20118 cited

Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

Christophe Krzeminski, Evelyne Lampin

The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoele…