2 papers
cond-mat.mes-hall2023
Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure
Xian Zhang, Bang Liu, Junsheng Huang +3
In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostru…
cond-mat.mes-hall2023
High-Performance and Low-Power Sub-5 nm Field-Effect Transistors Based on 7-9-7-AGNR
Hang Guo, Xian Zhang, Shuai Chen +3
Recently, an extremely-air-stable one-dimensional 7-9-7-AGNR was successfully fabricated. To further reveal its potential application in sub-5-nm field-effect transistors (FETs), t…