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physics.app-ph2024
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
physics.app-ph2024
First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window
Seohyeon Park, Jaewook Yoo, Hyeojun Song +8
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer de…