1 citations · 1 across the 1 of their papers we have counts for
1 paper
Tao Hu, Xiaoqing Sun, Mingkai Bai +12
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a…