88 citations · 335 across the 7 of their papers we have counts for
5 papers · 1 filter
Discrete Charging in Polysilicon Gates of Single Electron Transistors
Dharmraj Kotekar-Patil, Stefan Jauerneck, David Wharam +4
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade…
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Enrico Prati, Marco De Michielis, Matteo Belli +14
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…
Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
F. Simmel, David Abusch-Magder, D. A. Wharam +2
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a sil…
Parallel Quantum-Point-Contacts as High-Frequency-Mixers
A. G. C. Haubrich, D. A. Wharam, H. Kriegelstein +4
We present the results of high-frequency mixing experiments performed upon parallel quantum point-contacts defined in the two-dimensional electron gas of an Al_{x}Ga_{1-x}As/GaAs-h…
Statistics of conductance oscillations of a quantum dot in the Coulomb-blockade regime
F. Simmel, T. Heinzel, D. A. Wharam
The fluctuations and the distribution of the conductance peak spacings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matri…