48 citations · 80 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2024★ 48 cited
Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition
M. Hajlaoui, S. W. D'Souza, L. Šmejkal +13
Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of…
cond-mat.mtrl-sci2023★ 15 cited
A Novel Ferroelectric Rashba Semiconductor
Gauthier Krizman, Tetiana Zakusylo, Lakshmi Sajeev +8
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injec…