2 papers
cond-mat.mtrl-sci2026
Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy
Shivashree Gowda, Stephen Schaefer, Ethan A. Scott +3
(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low…
cond-mat.mtrl-sci2024
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
Stephen Schaefer, Davi Febba, Kingsley Egbo +3
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such u…