67 citations · 67 across the 2 of their papers we have counts for
2 papers
eess.SY2024
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities
Yang Feng, Zhaohui Sun, Chengcheng Wang +8
Flash memory has been widely adopted as stand-alone memory and embedded memory due to its robust reliability. However, the limited endurance obstacles its further applications in s…
cond-mat.mtrl-sci2022★ 67 cited
A gate-programmable van der Waals metal-ferroelectric-semiconductor memory
Wanying Li, Yimeng Guo, Zhaoping Luo +10
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet…