5 citations · 5 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2026
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
cond-mat.mes-hall2024★ 5 cited
Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping
Ayse Melis Aygar, Oliver Durnan, Bahar Molavi +3
Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density th…