2 papers
physics.app-ph2024
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…
cond-mat.mes-hall2017
Unified mechanism of the surface Fermi level pinning in III-As nanowires
P. A. Alekseev, M. S. Dunaevskiy, G. E. Cirlin +4
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fe…