35 citations · 47 across the 4 of their papers we have counts for
4 papers
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…
Unified mechanism of the surface Fermi level pinning in III-As nanowires
P. A. Alekseev, M. S. Dunaevskiy, G. E. Cirlin +4
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fe…
Electrical anisotropy of heteroepitaxial InSb/GaAs layers
T. A. Komissarova, A. N. Semenov, D. A. Kirilenko +5
We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron t…
Interface controlled electronic variations in correlated heterostructures
K. Gehrke, V. Moshnyaga, O. I. Lebedev +3
An interface modification of LCMO-BTO superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the m…