most citedOptimization of scandium oxide growth by high pressure sputtering on silicon

15 citations · 39 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2024★ 10 cited

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés

In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon…

physics.app-ph2024★ 2 cited

High Pressure Sputtering For Kigh-k Dielectric Deposition. Is It Worth Trying?

Enrique San Andrés, Pedro Carlos Feijoo, María Ángela Pampillón +2

Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate…

cond-mat.mtrl-sci2024★ 12 cited

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés +4

AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of…

cond-mat.mtrl-sci2024★ 15 cited

Optimization of scandium oxide growth by high pressure sputtering on silicon

Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés +1

This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for opti…