A. A. Klimenko

most citedExtended defects as a source of phonon confinement in polycrystalline Si and Ge films

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2024★ 1 cited

Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov +9

We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers wi…

cond-mat.mtrl-sci2021

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers

Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii +5

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si $_{3}$ N $_{4}$ /SiO $_{2}$ /…

Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Influence of the thickness of Si and Ge films deposited on Si3​N4​/SiO2​/Si substrates on their structure and diffusion of hydrogen atoms from Si3​N4​ layers

Influence of the thickness of Si and Ge films deposited on Si $_{3}$ N $_{4}$ /SiO $_{2}$ /Si substrates on their structure and diffusion of hydrogen atoms from Si $_{3}$ N $_{4}$ layers