most citedExtended defects as a source of phonon confinement in polycrystalline Si and Ge films

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cond-mat.mtrl-sci2024★ 1 cited

Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov +9

We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers wi…