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cond-mat.mtrl-sci2024★ 1 cited
Extended defects as a source of phonon confinement in polycrystalline Si and Ge films
Larisa V. Arapkina, Kirill V. Chizh, Oleg V. Uvarov +9
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers wi…
cond-mat.mtrl-sci2012★ 11 cited
Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-s…