7 citations · 12 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2024★ 5 cited
Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
J. Moneta, M. Krysko, J. Z. Domagala +5
Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-conten…
physics.app-ph2023★ 7 cited
The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface
J. Smalc-Koziorowska, J. Moneta, G. Muziol +5
(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconduct…
physics.optics2022
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Paweł Wolny, Henryk Turski, Grzegorz Muziol +6
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…