3 citations · 7 across the 10 of their papers we have counts for
6 papers · 1 filter
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang +26
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using elect…
Robust spin-qubit control in a natural Si-MOS quantum dot using phase modulation
Takuma Kuno, Takeru Utsugi, Andrew J. Ramsay +13
Silicon quantum dots are one of the most promising candidates for practical quantum computers because of their scalability and compatibility with the well-established complementary…
Thermal circuit model for silicon quantum-dot array structures
Takeru Utsugi, Nobuhiro Kusuno, Takuma Kuno +7
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced read…
Single electron routing in a silicon quantum-dot array
Takeru Utsugi, Takuma Kuno, Noriyuki Lee +5
The ability to transport single electrons on a quantum dot array dramatically increases the freedom in designing quantum computation schemes that can be implemented on solid-state…
Electron Charge Sensor with Hole Current Operating at Cryogenic Temperature
Digh Hisamoto, Noriyuki Lee, Ryuta Tsuchiya +4
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that co…