8 citations · 11 across the 5 of their papers we have counts for
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Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. E. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
In this work we study the self-heating (1) effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fi cross section in rectangular, trapeze and…
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
M. M. Khalilloev, B. O. Jabbarova, A. A. Nasirov
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cro…
Simulation study of short channel effects in junctionless SOI MOSFETS
Mahkam Khalilloev
In this work influence of gate extension, channel doping level, and channel thickness to short channel effects- DIBL effect and subthreshold swing, SS for the planar and vertical j…
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
A. E. Atamuratov, B. O. Jabbarova, E. Sh. Xaitbayev +2
In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric p…