most citedAlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

9 citations · 9 across the 1 of their papers we have counts for

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1 paper

physics.app-ph2024★ 9 cited

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Pieter Cardinael, Sachin Yadav, Herwig Hahn +11

Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface…