2 papers
cond-mat.mtrl-sci2003
Schottky barrier heights at polar metal/semiconductor interfaces
C. Berthod, N. Binggeli, A. Baldereschi
Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their depend…
cond-mat.supr-con2002
Modeling scanning tunneling spectra of
B. W. Hoogenboom, C. Berthod, M. Peter +2
Recent angle-resolved photoemission and neutron scattering data have provided new ingredients for the interpretation of scanning tunneling spectra on BiSrCaCuO.…