12 citations · 12 across the 2 of their papers we have counts for
3 papers
14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +6
The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei…
Room Temperature Microsecond Coherence of Silicon Dangling Bonds
J. Möser, H. Popli, T. H. Tennahewa +8
Paramagnetic point defects in silicon provide qubits that could open up pathways towards silicon-technology based, low-cost, room-temperature (RT) quantum sensing. The silicon dang…
Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography
T. B. Biktagirov, A. N. Smirnov, V. Yu. Davydov +4
The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center'…