activity
20142024
most citedA PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

50 citations · 98 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024★ 3 cited

Van der Waals epitaxy of Weyl-semimetal Td-WTe

Alexandre Llopez, Frédéric Leroy, Calvin Tagne-Kaegom +13

Epitaxial growth of WTe offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thick…

cond-mat.mtrl-sci2022★ 6 cited

Following enhanced Sm spin projection in GdSmN

J. D. Miller, J. F. McNulty, B. J. Ruck +6

The rare-earth nitrides form a series of structurally simple ferromagnetic semiconductors, a rare class of both fundamental interest and application potential. Within t…

physics.ins-det2016★ 50 cited

A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

Ji-yuan Zheng, Lai Wang, Di Yang +18

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs…

cond-mat.mtrl-sci2016★ 14 cited

AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

Stéphane Vézian, Benjamin Damilano, Franck Natali +2

An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found th…

cond-mat.mtrl-sci2014★ 25 cited

Highly resistive epitaxial Mg-doped GdN thin films

C. -M. Lee, H. Warring, S. Vézian +7

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier con…