3 citations · 3 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Wafer-scale MoS2 and HZO-based Ferroelectric Field Effect Transistors with 4.4 V Memory Window for Back-End Compatible Multibit Memory
Manisha Rajput, Farhan Ahmed Siddique, Chung-Che Huang +2
Ferroelectric field-effect transistors (FeFETs) with low-power operation and non-volatile data retention enabled by stable ferroelectric polarization switching, have emerged as pro…
cond-mat.mes-hall2024★ 3 cited
Effects of Reduced Interlayer Interactions on the K-point Excitons of MoS Nanoscrolls
Sagnik Chatterjee, Tamaghna Chowdhury, Pablo Díaz Núñez +6
Transition metal dichalcogenide (TMD) nanoscrolls (NS) exhibit significant photoluminescence (PL) signals despite their multilayer structure, which cannot be explained by the strai…