N. Shanthi

most citedRealistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors

96 citations · 200 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2003★ 96 cited

Realistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors

Sameer Sapra, N. Shanthi, D. D. Sarma

We analyze the electronic structure of group II-VI semiconductors obtained within LMTO approach in order to arrive at a realistic and minimal tight binding model, parameterized to…

cond-mat.str-el1996★ 57 cited

Electronic excitation spectra from ab-initio band structure results for LaMO_3 (M = Cr-Ni)

D. D. Sarma, N. Shanthi, Priya Mahadevan

We present calculated electron excitation spectra for the LaMO_3 series (M=Cr-Ni) obtained within ab-initio band structure calculations for the real geometric and magnetic structur…

cond-mat1996★ 47 cited

Estimates of electronic interaction parameters for La $M$ O $_{3}$ compounds ( $M$ =Ti-Ni) from ab-initio approaches

Priya Mahadevan, N. Shanthi, D. D. Sarma

We have analyzed the ab-initio local density approximation band structure calculations for the family of perovskite oxides, La $M$ O $_{3}$ with $M$ =Ti-Ni within a parametrized nearest…

Realistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors

Electronic excitation spectra from ab-initio band structure results for LaMO_3 (M = Cr-Ni)

Estimates of electronic interaction parameters for LaMO3​ compounds (M=Ti-Ni) from ab-initio approaches

Estimates of electronic interaction parameters for La $M$ O $_{3}$ compounds ( $M$ =Ti-Ni) from ab-initio approaches