24 citations · 53 across the 4 of their papers we have counts for
4 papers
Observation of Optical Gain in Er-Doped GaN Epilayers
V. X. Ho, Y. Wang, B. Ryan +4
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emi…
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…
Metastable giant moments in Gd-implanted GaN, Si, and sapphire
X. Wang, C. Timm, X. M. Wang +4
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying…
Pressure effects on the Tc of superconducting MgCxNi3
H. D. Yang, S. Mollah, W. L. Huang +7
The effect of hydrostatic pressure (P) up to 17 kbar on the superconducting transition temperature (Tc) of the newly discovered intermetallic non-oxide perovskite superconductor Mg…