329 citations · 1.1k across the 10 of their papers we have counts for
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External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures
X. Liu, W. L. Lim, L. V. Titova +10
In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K i…
Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
K. C. Ku, S. J. Potashnik, R. F. Wang +9
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization…
Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions
S. H. Chun, S. J. Potashnik, K. C. Ku +2
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a larg…
Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys
X. Chen, M. Na, M. Cheon +9
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well re…
Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
S. J. Potashnik, K. C. Ku, S. H. Chun +3
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing…
Two-Carrier Transport in Epitaxially Grown MnAs
J. J. Berry, S. J. Potashnik, S. H. Chun +3
Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transpo…