collaborators

1 paper

cond-mat.stat-mech2026

Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs

Feiyi Liu, Min Guo, Shiyang Chen +3

Single-event burnout (SEB) in silicon carbide (SiC) power MOSFETs is often characterized by deterministic threshold quantities. Near the boundary between recovery and runaway, stoc…