2 papers
cond-mat.stat-mech2026
Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs
Feiyi Liu, Min Guo, Shiyang Chen +3
Single-event burnout (SEB) in silicon carbide (SiC) power MOSFETs is often characterized by deterministic threshold quantities. Near the boundary between recovery and runaway, stoc…
quant-ph2025
Motion-driven quantum dissipation in an open electronic system with nonlocal interaction
Feiyi Liu, Min Guo, Mingyang Liu +2
In this paper, we study excitations and dissipation in two infinite parallel metallic plates undergoing relative motion. The degrees of freedom of the electrons in both plates are…