183 citations · 378 across the 12 of their papers we have counts for
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Advanced DFT-NEGF transport techniques for novel 2D-material and device exploration including HfS2/WSe2 van-der-Waals Heterojunction TFET and WTe2/WS2 metal/semiconductor contact
Aryan Afzalian, Elaheh Akhoundi, Gautam Gaddemane +2
We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport in novel materials and devices and in partic…
An efficient direct band-gap transition in germanium by three-dimensional strain
Simon Mellaerts, Valeri Afanasiev, Jin Won Seo +2
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation st…
Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Simon Mellaerts, Ruishen Meng, Valeri Afanasiev +3
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Cu…
Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Simon Mellaerts, Ruishen Meng, Mariela Menghini +4
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electro…