activity
20032022
most cited229 nm UV LEDs using p-type silicon for increased hole injection

69 citations · 101 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2022★ 11 cited

A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

Ashwin Tunga, Kexin Li, Nicholas C. Miller +3

Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model a…

physics.app-ph2017★ 69 cited

229 nm UV LEDs using p-type silicon for increased hole injection

Dong Liu, Sang June Cho, Jeongpil Park +10

Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was…

physics.app-ph2017★ 1 cited

UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection

Sang June Cho, Dong Liu, Jung-Hun Seo +12

As UV LEDs are explored at shorter wavelengths (< 280 nm) into the UVC spectral range, the crystalline quality of epitaxial AlGaN films with high Al compositions and inefficient ho…

cs.CE2013★ 6 cited

A Discontinuous Galerkin Time Domain Framework for Periodic Structures Subject To Oblique Excitation

Nicholas C. Miller, Andrew D. Baczewski, John D. Albrecht +1

A nodal Discontinuous Galerkin (DG) method is derived for the analysis of time-domain (TD) scattering from doubly periodic PEC/dielectric structures under oblique interrogation. Fi…

cond-mat2003★ 14 cited

Energy levels in polarization superlattices: a comparison of continuum strain models

B. Jogai, J. D. Albrecht, E. Pan

A theoretical model for the energy levels in polarization superlattices is presented. The model includes the effect of strain on the local polarization-induced electric fields and…