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cond-mat.mtrl-sci2026

From phase transformation to amorphization: damage accumulation in Yb-implanted

Joanna Matulewicz, Renata Ratajczak, Ewa Grzanka +17

This study provides a comprehensive analysis of the radiation response and structural evolution of differently oriented single crystals subjected to Yb ion implantation…

cond-mat.mtrl-sci2026

Carrier Localization in Pnictogen-Based Chalcohalides from Defect-Bound Hot Polarons

Xiaoyu Guo, Junzhi Ye, Cibrán Lopez Alvarez +19

Pnictogen-based solar absorbers have gained prominence as promising nontoxic and stable alternatives to lead-halide perovskites (LHPs), but are severely limited by carrier localiza…

cond-mat.mtrl-sci2026

Structural and Optical Characteristics of Implanted with Rare Earth Ions

Renata Ratajczak, Joanna Matulewicz, Slawomir Prucnal +10

We investigated the structural evolution and optical properties of crystals implanted with different rare-earth (RE) ions using channeling Rutherford Backscattering Spe…

cond-mat.mtrl-sci2025

Charge-transfer-mediated boron magneto-ionics: Towards voltage-driven multi-ion transport

Zheng Ma, Karim-Alexandros Kantre, Huan Tan +10

Voltage control of magnetism via magneto-ionics, where ion transport and/or redox processes drive magnetic modulation, holds great promise for next-generation memories and computin…

cond-mat.mtrl-sci2025

Carbon magneto-ionics: Control of magnetism through voltage-driven carbon transport

Zhengwei Tan, Zheng Ma, Simone Privitera +15

Control of magnetism through voltage-driven ionic processes (i.e., magneto-ionics) holds potential for next-generation memories and computing. This stems from its non-volatility, f…

cond-mat.mtrl-sci2024

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…