Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors

Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller +1

Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60…