activity
20042020
most citedSmB: Topological insulator or semiconductor with valence-fluctuation induced hopping transport?

14 citations · 60 across the 11 of their papers we have counts for

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6 papers · 1 filter

cond-mat.str-el2020★ 6 cited

Effect of pressure on electric transport properties of carbon-doped EuB6

M. Batkova, I. Batko, E. Bauer +3

We report about influence of external pressure on electrical resistivity of EuB5.99C0.01, the compound believed to be intrinsically inhomogeneous due to fluctuation of carbon conte…

cond-mat.str-el2020★ 3 cited

Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01

Ivan Batko, Marianna Batkova, Vinh Hung Tran +2

EuB5.99C0.01 is a low-carrier density ferromagnet that is believed to be intrinsically inhomogeneous due to fluctuations of carbon content. In accordance with our previous studies,…

cond-mat.str-el2018★ 1 cited

SmB6: A material with anomalous energy distribution function of charge carriers?

I. Batko, M. Batkova

We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in an impurity band of valence fluctuating semiconductors both occupied an…

cond-mat.str-el2017★ 5 cited

Low temperature resistivity studies of SmB6: Observation of twodimensional variable-range hopping conductivity

Marianna Batkova, Ivan Batko, Slavomir Gabani +3

We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true…

cond-mat.str-el2016

Effect of valence fluctuations on the ground state properties of SmB6

M. Batkova, I. Batko

We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in the impurity band of SmB6, energies of electrons occupying impurity sit…

cond-mat.str-el2007★ 14 cited

SmB: Topological insulator or semiconductor with valence-fluctuation induced hopping transport?

I. Batko, M. Batkova

We advert to the fact that presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies…