2 papers
cond-mat.mes-hall2026
Radio-frequency assisted switching in perpendicular magnetic tunnel junctions
Mark Hayward, Salvatore Perna, Massimiliano d'Aquino +5
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requ…
physics.app-ph2024
A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices
Mohamed Yassine Bouhamidi, Chunhui Dai, Michel Stephan +8
Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small mol…